Persönlicher Status und Werkzeuge

Prof. Dr. Franz Kreupl

Associate Professor

Hybrid Electronic Systems

Contact Details

Visitenkarte in TUMonline

Academic Career and Research Areas

Prof. Kreupl (b. 1965) conducts research on applications for nano- and carbon-based materials. The focus lies on carbon nanotubes, nanowires and graphene. These materials have the potential to significantly improve the performance of components, sensors, interconnects and information and energy storage devices.

Prof. Kreupl studied physics at the University of Regensburg and did his doctorate there in 1998 after receiving a Siemens scholarship. After that, he joined Siemens’ central research department as a development engineer. From 2000, he was project manager for carbon nanotubes, nanowires and carbon materials at Infineon Corporate Research. From 2006 to 2009, he was responsible for evaluating new memory technologies at Qimonda. In 2009, he moved to SanDisk in Silicon Valley, California, where he oversaw the development of resistive memory technology. He accepted TUM’s offer of a Chair in April 2011. Prof. Kreupl is a member of the German Physical Society (DPG), the Material Research Society (MRS) and a Senior Member of the IEEE.


  • SanDisk Patent Award (2011)
  • SanDisk Patent Award (2010)
  • Qimonda Innovation Award (2008)
  • Infineon Inventor Award (2000)

Key Publications

Kreupl F: "Carbon-based Materials as Key-enabler for More-Than-Moore” (invited paper). MRS Proceedings. 2011; 1303: mrsf10-1303-y02-01-b2-0.


Kreupl F: “Carbon Nanotubes in Microelectronic Applications”. In: Carbon Nanotube Devices: Properties, Modeling, Integration and Applications. Editor: Hierold C. 2008; Chapter 1.


Weber WM, Geelhaar L, Graham AP, Unger E, Duesberg GS, Liebau M, Pamler W, Chèze C, Riechert H, Lugli P, Kreupl F: “Silicon-nanowire transistors with intruded nickel-silicide contacts”. Nano Letters. 2006; 6: 2660-2666. 


Seidel R, Duesberg GS, Unger E, Graham AP, Liebau M, Kreupl F: “ Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Model”. J. Phys. Chem. B. 2004; 108(6): 1888–1893.


Kreupl F,  Graham AP,  Duesberg GS, Steinhoegl W, Liebau M, Unger E, Hoenlein W: “Carbon Nanotubes in Interconnect Applications“. Microelectronic Engineering. 2002; 64: 399-408.