Persönlicher Status und Werkzeuge

Prof. Dr. Martin Stutzmann



Contact Details

Business card at TUMonline

Academic Career and Research Areas

The research of Martin Stutzmann (b. 1956) explores fundamental and application-oriented aspects of semiconductor physics. His main areas of interest are the production, nanostructuring and biofunctionalizing of semiconductors with a large band gap like gallium nitride, zinc oxide and diamond, as well as thin layers and silicon nanoparticles. Possible applications include biosensors, model systems for quantum information processing and semiconductor-based photovoltaic and thermoelectric energy conversion.

After studying physics in Marburg, Paris and Stanford (doctorate in 1982), Martin Stutzmann did postdoctoral work at the Xerox Research Center in Palo Alto, California, until 1985. After that, he became a staff scientist at the Max Planck Institute for Solid State Research in Stuttgart. In 1993, he was appointed to the Chair of Experimental Semiconductor Physics. He also became a Co-Director of TUM’s Walter Schottky Institute.


  • Fellow der American Physical Society (2006)
  • Sir Neville Mott-Lecture (1999)
  • Walter-Schottky-Preis der Deutschen Physikalischen Gesellschaft (1988)

Key Publications

Stegner AR, Pereira RN, Klein K, Lechner R, Dietmüller R, Brandt MS, Stutzmann M: „Electronic transport in phosphorus-doped silicon nanocrystal networks“. Phys. Rev. Lett. 2008; 100: 026803


Härtl A, Schmich E, Garrido JA, Hernando J, Catharino SCR, Walter S, Feulner P, Kromka A, Steinmüller D, Stutzmann M: „Protein-modified nanocrystalline diamond thin films for biosensor applications”. Nature Materials. 2004;  3: 736-742


Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M : „Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures“. Journal of Applied Physics. 2000; 87: 334-344


Stutzmann M, Biegelsen DK, Street RA: „Detailed Investigation of Doping in Hydrogenated Amorphous Silicon and Germanium”. Physical Review. 1987; B 35: 5666-5701

Stutzmann  M, Jackson  WB, Tsai  CC: „Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon – a Systematic Study”. Physical Review. 1985; B 32: 23-47