Prof. Dr. Hussam Amrouch
Academic Career and Research Areas
Prof. Hussam Amrouch (*1985) is at the forefront of reimagining the future of AI processors by exploring novel computer architectures that transcend the traditional von Neumann paradigm. His visionary research endeavors to harness emerging technologies towards propelling AI chips into every facet of our daily lives, transforming the fabric of our society. His research interests are Ultra-efficient embodied AI, Reliable and secure designs in cutting-edge technologies, Cryogenic circuits that pave the way for large-scale quantum computers.
Prof. Amrouch earned his Ph.D. degree (Dr.-Ing.) with high distinction from the Karlsruhe Institute of Technology. In 2015, he founded and led the "Dependable Hardware" research group at KIT. In July 2020, he was appointed as a Jun.-Professor at the University of Stuttgart, where he headed the Chair of Semiconductor Test and Reliability (STAR). In 2023, he was appointed to the professorship (W3) for AI Processor Design at TUM. He is also part of the Munich Institute of Robotics and Machine Intelligence (MIRMI) and Munich Quantum Valley (MQV).
- 10x “European Network of Excellence on High Performance and Embedded Architecture and Compilation” (HiPEAC) Paper Awards
- 3x Best paper award nomination at Design Automation Conference (DAC) (2016, 2017) and at Design, Automation and Test in Europe Conference (DATE) (2017)
- Ph.D. was distinguished as “Summa cum laude” (2015)
Key Publications (all publications)
T. Bücher, R. Huber, C. Eschenbaum, A. Mertens, U. Lemmer, and H. Amrouch: “Printed Temperature Sensor Array for High-Resolution Thermal Mapping,” Nature Scientific Reports, 2022.Abstract
S. Deng, M. Benkhelifa, S. Thomann, Z. Faris, Z. Zhao, T.-J. Huang, Y. Xu, V. Narayanan, K. Ni, and H. Amrouch: "Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications," in 68th Annual IEEE International Electron Devices Meeting (IEDM), 2022.Abstract
Z. Jiang, Y. Xiao, S. Chatterjee, H. Mulaosmanovic, S. Duenkel, S. Soss, S. Beyer, R. Joshi, Y. S. Chauhan, H. Amrouch, V. Narayanan, and K. Ni, “Asymmetric Double Gate Ferroelectric FET to Break the Tradeoff between Thickness Scaling and Memory Window,” in Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI), 2022.Abstract
K. Ni, S. Thomann, O. Prakash, Z. Zhao, S. Deng, and H. Amrouch, “On the Channel Percolation in Ferroelectric FET Towards Proper Analog States Engineering,” in 67th Annual IEEE International Electron Devices Meeting (IEDM), 2021.Abstract
S. Thomann, P. R. Genssler, and H. Amrouch, “HW/SW Co-design for Reliable In-Memory Brain-Inspired Hyperdimensional Computing,” IEEE Transactions on Computers (TC), 2023.Abstract